The Toshiba 2SA1987(QSCA) is a single PNP bipolar junction transistor packaged in a TO-3PL through-hole package. It has a maximum collector-emitter voltage of 230V, a maximum DC collector current of 15A, and a maximum power dissipation of 180mW. The transistor operates at a maximum temperature of 150°C. It is constructed from silicon material and has a minimum DC current gain of 55 at 1A and 5V. The transistor has a maximum transition frequency of 30 MHz.
PackageTO-3PL
MountingThrough Hole
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Technical Specifications
Toshiba 2SA1987(QSCA) technical specifications.
General
| Package/Case | TO-3PL |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 20 |
| Package Width (mm) | 5 |
| Package Height (mm) | 26 |
| Pin Pitch (mm) | 5.45 |
| Mounting | Through Hole |
| Type | PNP |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 230V |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 230V |
| Maximum DC Collector Current | 15A |
| Maximum Power Dissipation | 180000mW |
| Material | Si |
| Minimum DC Current Gain | 55@1A@5V |
| Maximum Transition Frequency | 30(Typ)MHz |
| Category | Bipolar Power |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541290075 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba 2SA1987(QSCA) Datasheet
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