PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features a maximum collector-emitter voltage of 50V and a continuous collector current of 5A. Offers a maximum power dissipation of 1000mW and a minimum DC current gain of 200. Packaged in a 3-pin New PW-Mold (TO-252AB) with dimensions of 6.5mm x 5.5mm x 2.3mm. Operates within a temperature range of -55°C to 150°C.
PackageNew PW-Mold
MountingSurface Mount
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Technical Specifications
Toshiba 2SA2097(TE16L1,NQ) technical specifications.
General
| Package/Case | New PW-Mold |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 6.5 |
| Package Width (mm) | 5.5 |
| Package Height (mm) | 2.3 |
| Seated Plane Height (mm) | 2.4 |
| Package Weight (g) | 0.36 |
| Mounting | Surface Mount |
| Jedec | TO-252AB |
| Type | PNP |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 50V |
| Maximum Emitter Base Voltage | 7V |
| Maximum Collector-Emitter Voltage | 50V |
| Maximum DC Collector Current | 5A |
| Maximum Power Dissipation | 1000mW |
| Material | Si |
| Minimum DC Current Gain | [email protected]@2V|[email protected]@2V |
| Category | Bipolar Power |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Toshiba 2SA2097(TE16L1,NQ) Datasheet
Download the complete datasheet for Toshiba 2SA2097(TE16L1,NQ) to view detailed technical specifications.
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