The Toshiba 2SB1375(F) is a TO-220-3 packaged NPN bipolar junction transistor with a maximum collector current of 3A and a maximum operating temperature of 150°C. It has a collector-emitter breakdown voltage of 60V and a collector-emitter saturation voltage of 1.5V. This lead-free transistor is suitable for through-hole mounting and has a maximum power dissipation of 2W.
Toshiba 2SB1375(F) technical specifications.
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector-emitter Voltage-Max | 1.5V |
| Emitter Base Voltage (VEBO) | 7V |
| Height | 8.1mm |
| Lead Free | Lead Free |
| Length | 10mm |
| Max Collector Current | 3A |
| Max Frequency | 9MHz |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 2W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Bulk |
| Transition Frequency | 9MHz |
| Width | 4.5mm |
| RoHS | Compliant |
No datasheet is available for this part.
