
PNP Bipolar Junction Transistor (BJT) for through-hole mounting. Features a 60V collector-emitter voltage, 3A continuous collector current, and 2000mW power dissipation. Operates with a minimum DC current gain of 100 at 0.5A/5V. Packaged in a TO-220NIS plastic case with 3 pins and a tab.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Toshiba 2SB1375(LBS2N-JRC) datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220NIS |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10 |
| Package Width (mm) | 4.5 |
| Package Height (mm) | 15 |
| Seated Plane Height (mm) | 15 + 5.6(Max) |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Type | PNP |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 60V |
| Maximum Emitter Base Voltage | 7V |
| Maximum Collector-Emitter Voltage | 60V |
| Maximum DC Collector Current | 3A |
| Maximum Power Dissipation | 2000mW |
| Material | Si |
| Minimum DC Current Gain | [email protected]@5V|15@2A@5V |
| Maximum Transition Frequency | 9(Typ)MHz |
| Category | Bipolar Power |
| Max Operating Temperature | 150°C |
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Download the complete datasheet for Toshiba 2SB1375(LBS2N-JRC) to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.