PNP Bipolar Junction Transistor (BJT) for through-hole mounting. Features a 60V collector-emitter voltage, 3A continuous collector current, and 1800mW power dissipation. This single-element silicon transistor offers a minimum DC current gain of 100 at 0.5A/5V. Housed in a 3-pin TPL single in-line plastic package with dimensions of 10mm (L) x 4.5mm (W) x 13.4mm (H).
PackageTPL
MountingThrough Hole
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Technical Specifications
Toshiba 2SB1640(TPFJTN) technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
SIP
Package/Case
TPL
Package Description
Single In Line Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Package Length (mm)
10
Package Width (mm)
4.5
Package Height (mm)
13.4
Package Material
Plastic
Mounting
Through Hole
Type
PNP
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
60V
Maximum Emitter Base Voltage
7V
Maximum Collector-Emitter Voltage
60V
Maximum DC Collector Current
3A
Maximum Power Dissipation
1800mW
Material
Si
Minimum DC Current Gain
[email protected]@5V|15@2A@5V
Maximum Transition Frequency
9(Typ)MHz
Category
Bipolar Power
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Toshiba 2SB1640(TPFJTN) Datasheet
Download the complete datasheet for Toshiba 2SB1640(TPFJTN) to view detailed technical specifications.
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