NPN Bipolar Junction Transistor (BJT) for general-purpose applications. Features a maximum collector-emitter voltage of 80V and a maximum DC collector current of 0.3A. This single-element silicon transistor offers a minimum DC current gain of 120 at 50mA and 2V, with a typical transition frequency of 100MHz. Packaged in a 3-pin TO-92 plastic header style, it is designed for through-hole mounting. Maximum power dissipation is 600mW, with an operating temperature range up to 150°C.
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Toshiba 2SC1627-Y(T) technical specifications.
| Basic Package Type | Through Hole |
| Package Family Name | TO-92 |
| Package/Case | TO-92 |
| Package Description | Plastic Header Style Package |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 5.1(Max) |
| Package Width (mm) | 4.1(Max) |
| Package Height (mm) | 4.7(Max) |
| Seated Plane Height (mm) | 4.7(Max) + 1.8 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-92 |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 80V |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 80V |
| Maximum DC Collector Current | 0.3A |
| Maximum Power Dissipation | 600mW |
| Material | Si |
| Minimum DC Current Gain | 120@50mA@2V |
| Maximum Transition Frequency | 100(Typ)MHz |
| Category | Bipolar Small Signal |
| Max Operating Temperature | 150°C |
| Cage Code | S0562 |
| EU RoHS | No |
| HTS Code | 8541210075 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
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