NPN Bipolar Junction Transistor (BJT) for general-purpose applications. Features 80V collector-emitter voltage and 0.4A maximum DC collector current. This single-element transistor is housed in a 3-pin TO-92 Mod plastic package with through-hole mounting. Key specifications include 800mW maximum power dissipation and a minimum DC current gain of 120 at 50mA and 2V. Maximum transition frequency is 100MHz (typical).
PackageTO-92 Mod
MountingThrough Hole
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Technical Specifications
Toshiba 2SC1627A-Y(MATUT,C technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-92
Package/Case
TO-92 Mod
Package Description
Plastic Header Style Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Package Length (mm)
5.1(Max)
Package Width (mm)
4.1(Max)
Package Height (mm)
8.2(Max)
Seated Plane Height (mm)
10.4(Max)
Package Weight (g)
0.36
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-92
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
80V
Maximum Emitter Base Voltage
5V
Maximum Collector-Emitter Voltage
80V
Maximum DC Collector Current
0.4A
Maximum Power Dissipation
800mW
Material
Si
Minimum DC Current Gain
120@50mA@2V
Maximum Transition Frequency
100(Typ)MHz
Category
Bipolar Small Signal
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
HTS Code
8541210075
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Toshiba 2SC1627A-Y(MATUT,C Datasheet
Download the complete datasheet for Toshiba 2SC1627A-Y(MATUT,C to view detailed technical specifications.
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