NPN bipolar junction transistor (BJT) for general-purpose applications. Features a 50V collector-emitter voltage and 0.15A maximum DC collector current. This single-element, silicon transistor is housed in a 3-pin TO-92 plastic package suitable for through-hole mounting. Offers a minimum DC current gain of 200 at 2mA/6V and a maximum transition frequency of 80MHz. Operates within a temperature range of -55°C to 125°C.
PackageTO-92
MountingThrough Hole
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Technical Specifications
Toshiba 2SC1815(L)-GR(MATS technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-92 |
| Package/Case | TO-92 |
| Package Description | Plastic Header Style Package |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 5.1(Max) |
| Package Width (mm) | 4.1(Max) |
| Package Height (mm) | 4.7(Max) |
| Seated Plane Height (mm) | 4.7(Max) + 1.8 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-92 |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 60V |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 50V |
| Maximum DC Collector Current | 0.15A |
| Maximum Power Dissipation | 400mW |
| Material | Si |
| Minimum DC Current Gain | 200@2mA@6V |
| Maximum Transition Frequency | 80(Min)MHz |
| Category | Bipolar Small Signal |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 125°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | No |
| HTS Code | 8541210095 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Toshiba 2SC1815(L)-GR(MATS Datasheet
Download the complete datasheet for Toshiba 2SC1815(L)-GR(MATS to view detailed technical specifications.
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