The 2SC2510(YAESU) is a single NPN RF transistor from Toshiba, packaged in a 2-13B1A case with 4 pins for mounting. It has a maximum collector-emitter voltage of 35V and a maximum collector current of 20A. The transistor has a minimum DC current gain of 10 at 10A and 5V, and a maximum transition frequency of 30 MHz. It can operate at temperatures up to 175°C and has a minimum output power of 150mW. The transistor is made of silicon material and is suitable for use in RF applications.
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Toshiba 2SC2510(YAESU) technical specifications.
| Package/Case | 2-13B1A |
| Pin Count | 4 |
| PCB | 4 |
| Package Height (mm) | 7.2(Max) |
| Mounting | Screw |
| Material | Si |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector-Emitter Voltage | 35V |
| Maximum Collector Base Voltage | 60V |
| Maximum Emitter Base Voltage | 4V |
| Maximum DC Collector Current | 20A |
| Maximum Power Dissipation | 250000mW |
| Minimum DC Current Gain | 10@10A@5V |
| Minimum DC Current Gain Range | 2 to 30 |
| Maximum Transition Frequency | 30MHz |
| Max Operating Temperature | 175°C |
| Output Power | 150(Min)W |
| Cage Code | S0562 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Download the complete datasheet for Toshiba 2SC2510(YAESU) to view detailed technical specifications.
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