The 2SC2555(FA-1) is a single NPN bipolar junction transistor with a maximum collector-emitter voltage of 400V and maximum DC collector current of 8A. It has a maximum power dissipation of 2500mW and a minimum DC current gain of 10 at 4A and 5V. The transistor is packaged in a 2-16B1A plastic package with a maximum length of 15.9mm, width of 4.8mm, and height of 15.5mm. It is suitable for through-hole mounting and has a maximum operating temperature of 150°C.
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Toshiba 2SC2555(FA-1) technical specifications.
| Package Family Name | 2-16B1A |
| Package/Case | 2-16B1A |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 15.9(Max) |
| Package Width (mm) | 4.8(Max) |
| Package Height (mm) | 15.5 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 500V |
| Maximum Emitter Base Voltage | 7V |
| Maximum Collector-Emitter Voltage | 400V |
| Maximum DC Collector Current | 8A |
| Maximum Power Dissipation | 2500mW |
| Material | Si |
| Minimum DC Current Gain | 10@4A@5V|15@1A@5V |
| Category | Bipolar Power |
| Max Operating Temperature | 150°C |
| Cage Code | S0562 |
| EU RoHS | Yes |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
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