NPN bipolar junction transistor (BJT) in an S-Mini package, ideal for general-purpose amplification. Features a 50V collector-emitter voltage (VCEO) and a maximum collector current of 150mA. Offers a minimum DC current gain (hFE) of 120 and a transition frequency of 200MHz. Operates across a wide temperature range from -55°C to 125°C with a power dissipation of 150mW. Packaged in tape and reel for automated assembly.
Frequency80MHz
PackageTO-226-3
MountingThrough Hole, Surface Mount
PolarityNPN
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Technical Specifications
Toshiba 2SC2712-Y(TE85L,F) technical specifications.
General
| Package/Case | TO-226-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 150V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 1V |
| Contact Plating | Copper, Tin, Silver |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 80MHz |
| Gain Bandwidth Product | 80MHz |
| Height | 1.1mm |
| hFE Min | 120 |
| Length | 2.9mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 150mA |
| Max Frequency | 80MHz |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Mount | Through Hole, Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 150mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| Width | 1.5mm |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba 2SC2712-Y(TE85L,F) Datasheet
Download the complete datasheet for Toshiba 2SC2712-Y(TE85L,F) to view detailed technical specifications.
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