NPN Bipolar Junction Transistor (BJT) for general-purpose applications. Features a 120V collector-emitter voltage and 0.1A maximum collector current. This single-element, silicon transistor is housed in a 3-pin S-Mini surface-mount package with gull-wing leads, measuring 2.9mm x 1.5mm x 1.1mm. Offers a minimum DC current gain of 200 and a typical transition frequency of 100MHz, operating within a temperature range of -55°C to 125°C.
PackageS-Mini
MountingSurface Mount
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Technical Specifications
Toshiba 2SC2713-GR(TE85R,F technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
S-MINI
Package/Case
S-Mini
Lead Shape
Gull-wing
Pin Count
3
PCB
3
Package Length (mm)
2.9
Package Width (mm)
1.5
Package Height (mm)
1.1
Seated Plane Height (mm)
1.15
Pin Pitch (mm)
0.95
Package Weight (g)
0.012
Package Material
Plastic
Mounting
Surface Mount
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
120V
Maximum Emitter Base Voltage
5V
Maximum Collector-Emitter Voltage
120V
Maximum DC Collector Current
0.1A
Maximum Power Dissipation
150mW
Material
Si
Minimum DC Current Gain
200@2mA@6V
Maximum Transition Frequency
100(Typ)MHz
Category
Bipolar Small Signal
Min Operating Temperature
-55°C
Max Operating Temperature
125°C
Compliance
Cage Code
S0562
EU RoHS
Yes
HTS Code
8541210075
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2002/95/EC
Datasheet
Toshiba 2SC2713-GR(TE85R,F Datasheet
Download the complete datasheet for Toshiba 2SC2713-GR(TE85R,F to view detailed technical specifications.
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