The Toshiba 2SC2717(F) is a single NPN transistor made from silicon material. It has a maximum collector-emitter voltage of 25V and a maximum collector-base voltage of 30V. The transistor can handle a maximum DC collector current of 0.05A and a maximum power dissipation of 300mW. It operates within a temperature range of -55C to 125C.
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Toshiba 2SC2717(F) technical specifications.
| Material | Si |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector-Emitter Voltage | 25V |
| Maximum Collector Base Voltage | 30V |
| Maximum Emitter Base Voltage | 4V |
| Maximum DC Collector Current | 0.05A |
| Maximum Power Dissipation | 300mW |
| Minimum DC Current Gain | [email protected]@12.5V |
| Minimum DC Current Gain Range | 30 to 50 |
| Maximum Collector-Emitter Saturation Voltage | [email protected]@15mAV |
| Maximum Base Emitter Saturation Voltage | [email protected]@15mAV |
| Maximum Transition Frequency | 300(Min)MHz |
| Typical Output Capacitance | 2(Max)pF |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 125°C |
| Operational Bias Conditions | 12.5V/12.5mA |
| Typical Power Gain | 28(Min)dB |
| Cage Code | S0562 |
| EU RoHS | No |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Download the complete datasheet for Toshiba 2SC2717(F) to view detailed technical specifications.
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