The Toshiba 2SC2879(TRIO) is a single NPN transistor with a maximum collector-emitter voltage of 18V and a maximum collector current of 25mA. It has a maximum power dissipation of 250mW and is packaged in a 4-pin 2-13B1A case. The transistor is made of silicon material and has a minimum DC current gain of 10 at 10A and 5V. It operates over a temperature range of -65°C to 175°C and is suitable for use in a variety of applications.
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| Package/Case | 2-13B1A |
| Pin Count | 4 |
| PCB | 4 |
| Package Height (mm) | 7.2(Max) |
| Mounting | Screw |
| Material | Si |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector-Emitter Voltage | 18V |
| Maximum Collector Base Voltage | 45V |
| Maximum Emitter Base Voltage | 4V |
| Maximum DC Collector Current | 25A |
| Maximum Power Dissipation | 250000mW |
| Minimum DC Current Gain | 10@10A@5V |
| Minimum DC Current Gain Range | 2 to 30 |
| Maximum Transition Frequency | 30MHz |
| Typical Output Capacitance | 700pF |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 175°C |
| Output Power | 100W |
| Operational Bias Conditions | 12.5V/100mA |
| Typical Power Gain | 15.2dB |
| Cage Code | S0562 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
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