NPN RF Bipolar Junction Transistor (BJT) for surface mount applications. Features a 7V collector-emitter voltage, 30mA collector current, and 150mW power dissipation. Operates with a minimum DC current gain of 30 at 5V/10mA and a typical transition frequency of 6500MHz. Packaged in a 3-pin S-Mini plastic housing with gull-wing leads, measuring 2.9mm x 1.5mm x 1.1mm. Suitable for operation between -55°C and 125°C.
PackageS-Mini
MountingSurface Mount
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Technical Specifications
Toshiba 2SC3011(T5R,MBS-T) technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
S-MINI
Package/Case
S-Mini
Lead Shape
Gull-wing
Pin Count
3
PCB
3
Package Length (mm)
2.9
Package Width (mm)
1.5
Package Height (mm)
1.1
Seated Plane Height (mm)
1.15
Pin Pitch (mm)
0.95
Package Weight (g)
0.012
Package Material
Plastic
Mounting
Surface Mount
Material
Si
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector-Emitter Voltage
7V
Maximum Collector Base Voltage
20V
Maximum Emitter Base Voltage
3V
Maximum DC Collector Current
0.03A
Maximum Power Dissipation
150mW
Minimum DC Current Gain
30@10mA@5V
Minimum DC Current Gain Range
30 to 50
Maximum Transition Frequency
6500(Typ)MHz
Maximum Noise Figure
2.3(Typ)dB
Typical Input Capacitance
0.8pF
Typical Output Capacitance
0.7pF
Min Operating Temperature
-55°C
Max Operating Temperature
125°C
Operational Bias Conditions
5V/10mA
Typical Power Gain
12dB
Compliance
Cage Code
S0562
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Toshiba 2SC3011(T5R,MBS-T) Datasheet
Download the complete datasheet for Toshiba 2SC3011(T5R,MBS-T) to view detailed technical specifications.
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