Toshiba's 2SC3074-Y(T6L1PP,N is a single NPN bipolar junction transistor with a maximum collector-emitter voltage of 50V and a maximum collector current of 5A. It has a maximum power dissipation of 1000mW and is packaged in the TO-252AB surface mount package. The transistor is made of silicon material and has a minimum DC current gain of 120 at 1A and 1V. It operates at a maximum temperature of 150 degrees Celsius.
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Toshiba 2SC3074-Y(T6L1PP,N technical specifications.
| Package/Case | New PW-Mold |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 6.5 |
| Package Width (mm) | 5.5 |
| Package Height (mm) | 2.3 |
| Package Weight (g) | 0.36 |
| Mounting | Surface Mount |
| Jedec | TO-252AB |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 60V |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 50V |
| Maximum DC Collector Current | 5A |
| Maximum Power Dissipation | 1000mW |
| Material | Si |
| Minimum DC Current Gain | 120@1A@1V |
| Maximum Transition Frequency | 120(Typ)MHz |
| Category | Bipolar Power |
| Max Operating Temperature | 150°C |
| Cage Code | S0562 |
| HTS Code | 8541290075 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
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