NPN RF BJT transistor, single element, silicon, surface mount. Features 15V collector-emitter voltage, 0.05A collector current, and 150mW power dissipation. Operates with 10V/2mA bias, offering a minimum DC current gain of 40 at 5mA/10V and a maximum transition frequency of 2400MHz. Housed in a 3-pin S-Mini plastic package with gull-wing leads, measuring 2.9mm x 1.5mm x 1.1mm, suitable for PCB mounting.
PackageS-Mini
MountingSurface Mount
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Technical Specifications
Toshiba 2SC3120(F) technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
S-MINI
Package/Case
S-Mini
Lead Shape
Gull-wing
Pin Count
3
PCB
3
Package Length (mm)
2.9
Package Width (mm)
1.5
Package Height (mm)
1.1
Seated Plane Height (mm)
1.15
Pin Pitch (mm)
0.95
Package Weight (g)
0.012
Package Material
Plastic
Mounting
Surface Mount
Material
Si
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector-Emitter Voltage
15V
Maximum Collector Base Voltage
30V
Maximum Emitter Base Voltage
3V
Maximum DC Collector Current
0.05A
Maximum Power Dissipation
150mW
Minimum DC Current Gain
40@5mA@10V
Minimum DC Current Gain Range
30 to 50
Maximum Transition Frequency
2400(Typ)MHz
Maximum Noise Figure
8(Typ)dB
Min Operating Temperature
-55°C
Max Operating Temperature
125°C
Operational Bias Conditions
10V/2mA
Compliance
Cage Code
S0562
EU RoHS
Yes
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Toshiba 2SC3120(F) Datasheet
Download the complete datasheet for Toshiba 2SC3120(F) to view detailed technical specifications.
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