
NPN RF Bipolar Junction Transistor for surface mount applications. Features a 15V collector-emitter voltage, 0.05A collector current, and 150mW power dissipation. This single-element transistor operates with a minimum DC current gain of 40 at 5mA/10V, a maximum transition frequency of 2400MHz, and a maximum noise figure of 8dB. Packaged in a 3-pin S-Mini plastic housing with gull-wing leads, measuring 2.9mm x 1.5mm x 1.1mm, it is suitable for operation between -55°C and 125°C.
Toshiba 2SC3120(T5R,T) technical specifications.
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