NPN RF Bipolar Junction Transistor, single element, silicon, surface mount. Features a maximum collector-emitter voltage of 15V and a maximum collector current of 0.025A. Offers a minimum DC current gain of 60 at 8mA and 3V, with a typical transition frequency of 1500MHz. Housed in a 3-pin S-Mini plastic package with gull-wing leads, measuring 2.9mm x 1.5mm x 1.1mm. Operates within a temperature range of -55°C to 125°C.
PackageS-Mini
MountingSurface Mount
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Technical Specifications
Toshiba 2SC3121(TE85L,F) technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
S-MINI
Package/Case
S-Mini
Lead Shape
Gull-wing
Pin Count
3
PCB
3
Package Length (mm)
2.9
Package Width (mm)
1.5
Package Height (mm)
1.1
Seated Plane Height (mm)
1.15
Pin Pitch (mm)
0.95
Package Weight (g)
0.012
Package Material
Plastic
Mounting
Surface Mount
Material
Si
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector-Emitter Voltage
15V
Maximum Collector Base Voltage
30V
Maximum Emitter Base Voltage
3V
Maximum DC Collector Current
0.025A
Maximum Power Dissipation
150mW
Minimum DC Current Gain
60@8mA@3V
Minimum DC Current Gain Range
50 to 120
Maximum Transition Frequency
1500(Typ)MHz
Min Operating Temperature
-55°C
Max Operating Temperature
125°C
Compliance
Cage Code
S0562
EU RoHS
Yes
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Toshiba 2SC3121(TE85L,F) Datasheet
Download the complete datasheet for Toshiba 2SC3121(TE85L,F) to view detailed technical specifications.
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