NPN Bipolar Junction Transistor (BJT) for surface mount applications. Features a 50V collector-emitter voltage and 0.15A continuous collector current. This single-element silicon transistor offers a minimum DC current gain of 600 at 2mA/6V and a typical transition frequency of 250MHz. Housed in a compact 3-pin S-Mini plastic package with gull-wing leads, measuring 2.9mm x 1.5mm x 1.1mm, it supports surface mounting with a 0.95mm pin pitch. Maximum power dissipation is 150mW, with an operating temperature up to 125°C.
PackageS-Mini
MountingSurface Mount
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Technical Specifications
Toshiba 2SC3295-A(T5LMAT-V technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
S-MINI
Package/Case
S-Mini
Lead Shape
Gull-wing
Pin Count
3
PCB
3
Package Length (mm)
2.9
Package Width (mm)
1.5
Package Height (mm)
1.1
Seated Plane Height (mm)
1.15
Pin Pitch (mm)
0.95
Package Weight (g)
0.012
Package Material
Plastic
Mounting
Surface Mount
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
50V
Maximum Emitter Base Voltage
5V
Maximum Collector-Emitter Voltage
50V
Maximum DC Collector Current
0.15A
Maximum Power Dissipation
150mW
Material
Si
Minimum DC Current Gain
600@2mA@6V
Maximum Transition Frequency
250(Typ)MHz
Category
Bipolar Small Signal
Max Operating Temperature
125°C
Compliance
Cage Code
S0562
EU RoHS
No
HTS Code
8541210075
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Toshiba 2SC3295-A(T5LMAT-V Datasheet
Download the complete datasheet for Toshiba 2SC3295-A(T5LMAT-V to view detailed technical specifications.
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