NPN Bipolar Junction Transistor (BJT) for surface mount applications. Features a 20V collector-emitter voltage and 0.3A maximum collector current. This single-element transistor offers a minimum DC current gain of 350 at 4mA and 2V. Housed in a 3-pin S-Mini (SOT) package with gull-wing leads, it has a maximum power dissipation of 150mW. Operating temperature range is -55°C to 125°C.
PackageS-Mini
MountingSurface Mount
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Technical Specifications
Toshiba 2SC3326-B(TE85R,F) technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOT
Package/Case
S-Mini
Package Description
Small Outline Transistor
Lead Shape
Gull-wing
Pin Count
3
PCB
3
Package Length (mm)
2.9
Package Width (mm)
1.5
Package Height (mm)
1.1
Seated Plane Height (mm)
1.15
Pin Pitch (mm)
0.95
Package Weight (g)
0.012
Package Material
Plastic
Mounting
Surface Mount
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
50V
Maximum Emitter Base Voltage
25V
Maximum Collector-Emitter Voltage
20V
Maximum DC Collector Current
0.3A
Maximum Power Dissipation
150mW
Material
Si
Minimum DC Current Gain
350@4mA@2V
Maximum Transition Frequency
30(Typ)MHz
Category
Bipolar Small Signal
Min Operating Temperature
-55°C
Max Operating Temperature
125°C
Compliance
Cage Code
S0562
EU RoHS
Yes
HTS Code
8541210095
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU
Datasheet
Toshiba 2SC3326-B(TE85R,F) Datasheet
Download the complete datasheet for Toshiba 2SC3326-B(TE85R,F) to view detailed technical specifications.
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