NPN RF Transistor, single element, silicon material, designed for through-hole mounting. Features a 3-pin TO-92 plastic package with formed leads, measuring 5.1mm (Max) L x 4.1mm (Max) W x 4.7mm (Max) H. Offers a maximum collector-emitter voltage of 80V and a maximum DC collector current of 0.1A. Maximum power dissipation is 400mW, with a minimum DC current gain of 350 at 2mA/6V. Operates within a temperature range of -55°C to 125°C.
PackageTO-92
MountingThrough Hole
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Technical Specifications
Toshiba 2SC3329-BL(TPE2) technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-92 |
| Package/Case | TO-92 |
| Package Description | Plastic Header Style Package |
| Lead Shape | Formed |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 5.1(Max) |
| Package Width (mm) | 4.1(Max) |
| Package Height (mm) | 4.7(Max) |
| Seated Plane Height (mm) | 4.7(Max) + 1.8 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-92 |
| Material | Si |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector-Emitter Voltage | 80V |
| Maximum Collector Base Voltage | 80V |
| Maximum Emitter Base Voltage | 5V |
| Maximum DC Collector Current | 0.1A |
| Maximum Power Dissipation | 400mW |
| Minimum DC Current Gain | 350@2mA@6V |
| Minimum DC Current Gain Range | 300 to 500 |
| Maximum Collector-Emitter Saturation Voltage | 0.1@1mA@10mAV |
| Maximum Transition Frequency | 42(Typ)MHz |
| Maximum Noise Figure | 6dB |
| Typical Output Capacitance | 6.2pF |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 125°C |
| Operational Bias Conditions | 6V/0.1mA |
Compliance
| Cage Code | S0562 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba 2SC3329-BL(TPE2) Datasheet
Download the complete datasheet for Toshiba 2SC3329-BL(TPE2) to view detailed technical specifications.
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