NPN Bipolar Junction Transistor (BJT) for general-purpose applications. Features an 800V collector-emitter voltage and 0.8A continuous collector current. This single-element silicon transistor is housed in a 3-pin TO-252AB (New PW-Mold) surface-mount package with a tab. Maximum power dissipation is 1000mW, with an operating temperature range of -55°C to 150°C.
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Toshiba 2SC3405(LB,Z) technical specifications.
| Package/Case | New PW-Mold |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 6.5 |
| Package Width (mm) | 5.5 |
| Package Height (mm) | 2.3 |
| Seated Plane Height (mm) | 2.4 |
| Package Weight (g) | 0.36 |
| Mounting | Surface Mount |
| Jedec | TO-252AB |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 900V |
| Maximum Emitter Base Voltage | 8V |
| Maximum Collector-Emitter Voltage | 800V |
| Maximum DC Collector Current | 0.8A |
| Maximum Power Dissipation | 1000mW |
| Material | Si |
| Minimum DC Current Gain | 6@1A@5V|[email protected]@5V |
| Category | Bipolar Power |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | S0562 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
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