NPN RF BJT transistor, single element, silicon, surface mount in an S-MINI package. Features 12V collector-emitter voltage, 0.08A collector current, and 150mW power dissipation. Offers a minimum DC current gain of 30 at 10V/20mA, a maximum transition frequency of 7000MHz, and a typical noise figure of 2dB. Operates within a temperature range of -55°C to 125°C.
PackageS-Mini
MountingSurface Mount
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Technical Specifications
Toshiba 2SC3606(TE85R,F) technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
S-MINI
Package/Case
S-Mini
Lead Shape
Gull-wing
Pin Count
3
PCB
3
Package Length (mm)
2.9
Package Width (mm)
1.5
Package Height (mm)
1.1
Seated Plane Height (mm)
1.15
Pin Pitch (mm)
0.95
Package Weight (g)
0.012
Package Material
Plastic
Mounting
Surface Mount
Material
Si
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector-Emitter Voltage
12V
Maximum Collector Base Voltage
20V
Maximum Emitter Base Voltage
3V
Maximum DC Collector Current
0.08A
Maximum Power Dissipation
150mW
Minimum DC Current Gain
30@20mA@10V
Minimum DC Current Gain Range
30 to 50
Maximum Transition Frequency
7000(Typ)MHz
Maximum Noise Figure
2dB
Typical Output Capacitance
1pF
Min Operating Temperature
-55°C
Max Operating Temperature
125°C
Operational Bias Conditions
10V/20mA
Typical Power Gain
16.5dB
Compliance
Cage Code
S0562
EU RoHS
Yes
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Toshiba 2SC3606(TE85R,F) Datasheet
Download the complete datasheet for Toshiba 2SC3606(TE85R,F) to view detailed technical specifications.
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