NPN Bipolar Junction Transistor (BJT) for general-purpose applications. Features 80V collector-emitter voltage, 2A continuous collector current, and 1000mW power dissipation. Single element silicon transistor with a minimum DC current gain of 70 at 0.5A and 2V. Packaged in a 3-pin MSTM through-hole configuration with a 2.54mm pin pitch. Maximum operating temperature of 150°C.
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Toshiba 2SC3669-O(F) technical specifications.
| Basic Package Type | Through Hole |
| Package Family Name | MSTM |
| Package/Case | MSTM |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 7.1(Max) |
| Package Width (mm) | 2.7(Max) |
| Package Height (mm) | 4.7(Max) |
| Seated Plane Height (mm) | 4.7(Max) + 1.9 |
| Pin Pitch (mm) | 2.54 |
| Package Weight (g) | 0.2 |
| Mounting | Through Hole |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 80V |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 80V |
| Maximum DC Collector Current | 2A |
| Maximum Power Dissipation | 1000mW |
| Material | Si |
| Minimum DC Current Gain | [email protected]@2V |
| Maximum Transition Frequency | 100(Typ)MHz |
| Category | Bipolar Small Signal |
| Max Operating Temperature | 150°C |
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541290075 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
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