NPN Bipolar Junction Transistor (BJT) for general-purpose applications. Features 80V collector-emitter voltage and 2A continuous collector current. This single-element silicon transistor offers a minimum DC current gain of 120 at 0.5A/2V and a typical transition frequency of 100MHz. Packaged in a 3-pin MSTM through-hole configuration with a 2.54mm pin pitch, it has a maximum power dissipation of 1000mW and an operating temperature range up to 150°C.
PackageMSTM
MountingThrough Hole
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Technical Specifications
Toshiba 2SC3669-Y(F) technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
MSTM
Package/Case
MSTM
Lead Shape
Through Hole
Pin Count
3
PCB
3
Package Length (mm)
7.1(Max)
Package Width (mm)
2.7(Max)
Package Height (mm)
4.7(Max)
Seated Plane Height (mm)
4.7(Max) + 1.9
Pin Pitch (mm)
2.54
Package Weight (g)
0.2
Mounting
Through Hole
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
80V
Maximum Emitter Base Voltage
5V
Maximum Collector-Emitter Voltage
80V
Maximum DC Collector Current
2A
Maximum Power Dissipation
1000mW
Material
Si
Minimum DC Current Gain
Maximum Transition Frequency
100(Typ)MHz
Category
Bipolar Small Signal
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
EU RoHS
Yes
HTS Code
8541290075
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Toshiba 2SC3669-Y(F) Datasheet
Download the complete datasheet for Toshiba 2SC3669-Y(F) to view detailed technical specifications.
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