The Toshiba 2SC4213-A(TE85L,F) is a single NPN bipolar junction transistor with a maximum collector base voltage of 50V and a maximum DC collector current of 0.3A. It features a maximum power dissipation of 100mW and a minimum DC current gain of 200 at 4mA and 2V. The transistor is packaged in a USM surface mount package with a seated plane height of 1.1mm maximum and is suitable for use in a range of applications. Operating temperature range is from -55°C to 125°C.
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Toshiba 2SC4213-A(TE85L,F) technical specifications.
| Package/Case | USM |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 2 |
| Package Width (mm) | 1.25 |
| Package Height (mm) | 0.9 |
| Seated Plane Height (mm) | 1.1(Max) |
| Mounting | Surface Mount |
| Jedec | SOT-323 |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 50V |
| Maximum Emitter Base Voltage | 25V |
| Maximum Collector-Emitter Voltage | 20V |
| Maximum DC Collector Current | 0.3A |
| Maximum Power Dissipation | 100mW |
| Material | Si |
| Minimum DC Current Gain | 200@4mA@2V |
| Maximum Transition Frequency | 30(Typ)MHz |
| Category | Bipolar Small Signal |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 125°C |
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541210095 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2002/95/EC |
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