NPN RF BJT transistor for surface mount applications, featuring a 3-pin USM (SOT-323) package with dimensions of 2mm x 1.25mm x 0.9mm. This single-element silicon transistor offers a maximum collector-emitter voltage of 15V and a maximum DC collector current of 0.05A. Key performance specifications include a minimum DC current gain of 40 at 5mA/10V, a maximum transition frequency of 2400MHz, and a typical power gain of 17dB. Operating bias conditions are 10V/2mA, with a maximum power dissipation of 100mW and an operating temperature range of -55°C to 125°C.
PackageUSM
MountingSurface Mount
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Technical Specifications
Toshiba 2SC4245(T5R,ALPSSF technical specifications.
General
Package/Case
USM
Pin Count
3
PCB
3
Package Length (mm)
2
Package Width (mm)
1.25
Package Height (mm)
0.9
Seated Plane Height (mm)
1.1(Max)
Mounting
Surface Mount
Jedec
SOT-323
Material
Si
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector-Emitter Voltage
15V
Maximum Collector Base Voltage
30V
Maximum Emitter Base Voltage
3V
Maximum DC Collector Current
0.05A
Maximum Power Dissipation
100mW
Minimum DC Current Gain
40@5mA@10V
Minimum DC Current Gain Range
30 to 50
Maximum Transition Frequency
2400(Typ)MHz
Maximum Noise Figure
13dB
Min Operating Temperature
-55°C
Max Operating Temperature
125°C
Operational Bias Conditions
10V/2mA
Typical Power Gain
17dB
Compliance
Cage Code
S0562
EU RoHS
Yes
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Toshiba 2SC4245(T5R,ALPSSF Datasheet
Download the complete datasheet for Toshiba 2SC4245(T5R,ALPSSF to view detailed technical specifications.
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