NPN RF Bipolar Junction Transistor for surface mount applications. Features a 12V maximum collector-emitter voltage and 0.08A maximum DC collector current. This single-element silicon transistor offers a maximum power dissipation of 100mW and a typical transition frequency of 7000MHz. Housed in a compact 3-pin USM (SOT-323) package with dimensions of 2mm x 1.25mm x 0.9mm.
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Toshiba 2SC4394(TE85L,F) technical specifications.
| Package/Case | USM |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 2 |
| Package Width (mm) | 1.25 |
| Package Height (mm) | 0.9 |
| Seated Plane Height (mm) | 1.1(Max) |
| Mounting | Surface Mount |
| Jedec | SOT-323 |
| Material | Si |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector-Emitter Voltage | 12V |
| Maximum Collector Base Voltage | 20V |
| Maximum Emitter Base Voltage | 3V |
| Maximum DC Collector Current | 0.08A |
| Maximum Power Dissipation | 100mW |
| Minimum DC Current Gain | 30@20mA@10V |
| Minimum DC Current Gain Range | 30 to 50 |
| Maximum Transition Frequency | 7000(Typ)MHz |
| Maximum Noise Figure | 2dB |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 125°C |
| Operational Bias Conditions | 10V/20mA |
| Cage Code | S0562 |
| EU RoHS | Yes |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
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