NPN Bipolar Junction Transistor (BJT) for through-hole mounting. Features a 230V collector-emitter voltage and 1A continuous collector current. Maximum power dissipation is 2000mW. Packaged in a TO-220NIS plastic case with 3 pins and a tab, offering a minimum DC current gain of 100 at 100mA/5V. Operates up to 150°C with a typical transition frequency of 100MHz.
Sign in to ask questions about the Toshiba 2SC4793(RCA2104-1) datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Toshiba 2SC4793(RCA2104-1) technical specifications.
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220NIS |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10 |
| Package Width (mm) | 4.5 |
| Package Height (mm) | 15 |
| Seated Plane Height (mm) | 15 + 5.6(Max) |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 230V |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 230V |
| Maximum DC Collector Current | 1A |
| Maximum Power Dissipation | 2000mW |
| Material | Si |
| Minimum DC Current Gain | 100@100mA@5V |
| Maximum Transition Frequency | 100(Typ)MHz |
| Category | Bipolar Power |
| Max Operating Temperature | 150°C |
| Cage Code | S0562 |
| HTS Code | 8541290075 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Download the complete datasheet for Toshiba 2SC4793(RCA2104-1) to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
