NPN RF Bipolar Junction Transistor for surface mount applications. Features a 30V maximum collector-emitter voltage and 0.02A maximum DC collector current. Offers 100mW maximum power dissipation and a typical transition frequency of 550MHz. Housed in a 3-pin SOT-416 (SSM) plastic package with gull-wing leads, measuring 1.6mm x 0.8mm x 0.7mm. Minimum DC current gain is 100 at 1mA/6V, with a typical power gain of 23dB and a maximum noise figure of 5dB.
PackageSSM
MountingSurface Mount
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Technical Specifications
Toshiba 2SC4915-Y(TE85L,F) technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SSM
Package/Case
SSM
Lead Shape
Gull-wing
Pin Count
3
PCB
3
Package Length (mm)
1.6
Package Width (mm)
0.8
Package Height (mm)
0.7
Seated Plane Height (mm)
0.9(Max)
Pin Pitch (mm)
0.5
Package Material
Plastic
Mounting
Surface Mount
Jedec
SOT-416
Material
Si
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector-Emitter Voltage
30V
Maximum Collector Base Voltage
40V
Maximum Emitter Base Voltage
4V
Maximum DC Collector Current
0.02A
Maximum Power Dissipation
100mW
Minimum DC Current Gain
100@1mA@6V
Minimum DC Current Gain Range
50 to 120
Maximum Transition Frequency
550(Typ)MHz
Maximum Noise Figure
5dB
Min Operating Temperature
-55°C
Max Operating Temperature
125°C
Operational Bias Conditions
6V/1mA
Typical Power Gain
23dB
Compliance
Cage Code
S0562
EU RoHS
Yes
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2002/95/EC
Datasheet
Toshiba 2SC4915-Y(TE85L,F) Datasheet
Download the complete datasheet for Toshiba 2SC4915-Y(TE85L,F) to view detailed technical specifications.
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