NPN Bipolar Junction Transistor (BJT) for surface mount applications. Features a dual common emitter configuration with two elements per chip. Maximum ratings include 50V collector-emitter voltage, 60V collector-base voltage, and 5V emitter-base voltage. Delivers up to 0.15A DC collector current and 200mW power dissipation. This silicon transistor offers a minimum DC current gain of 200 at 2mA/6V and a maximum transition frequency of 80MHz. Housed in a 5-pin USV package with gull-wing leads, measuring 2mm x 1.25mm x 0.9mm.
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Toshiba 2SC4944-GR(TE85R) technical specifications.
| Basic Package Type | Lead-Frame SMT |
| Package/Case | USV |
| Lead Shape | Gull-wing |
| Pin Count | 5 |
| PCB | 5 |
| Package Length (mm) | 2 |
| Package Width (mm) | 1.25 |
| Package Height (mm) | 0.9 |
| Seated Plane Height (mm) | 0.95 |
| Pin Pitch (mm) | 0.65 |
| Package Weight (g) | 0.006 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Type | NPN |
| Configuration | Dual Common Emitter |
| Number of Elements per Chip | 2 |
| Maximum Collector Base Voltage | 60V |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 50V |
| Maximum DC Collector Current | 0.15A |
| Maximum Power Dissipation | 200mW |
| Material | Si |
| Minimum DC Current Gain | 200@2mA@6V |
| Maximum Transition Frequency | 80(Min)MHz |
| Category | Bipolar Small Signal |
| Max Operating Temperature | 125°C |
| Cage Code | S0562 |
| EU RoHS | No |
| HTS Code | 8541210095 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
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