NPN RF Bipolar Junction Transistor for surface mount applications. Features a 12V collector-emitter voltage, 0.03A DC collector current, and 150mW power dissipation. Operates with a maximum transition frequency of 7000MHz and a typical noise figure of 2dB. Packaged in a 3-pin S-Mini SMT with gull-wing leads, measuring 2.9mm x 1.5mm x 1.1mm.
PackageS-Mini
MountingSurface Mount
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Technical Specifications
Toshiba 2SC5064-O(TE85R) technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
S-MINI
Package/Case
S-Mini
Lead Shape
Gull-wing
Pin Count
3
PCB
3
Package Length (mm)
2.9
Package Width (mm)
1.5
Package Height (mm)
1.1
Seated Plane Height (mm)
1.15
Pin Pitch (mm)
0.95
Package Weight (g)
0.012
Package Material
Plastic
Mounting
Surface Mount
Material
Si
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector-Emitter Voltage
12V
Maximum Collector Base Voltage
20V
Maximum Emitter Base Voltage
3V
Maximum DC Collector Current
0.03A
Maximum Power Dissipation
150mW
Minimum DC Current Gain
80@10mA@5V
Maximum Transition Frequency
7000(Typ)MHz
Maximum Noise Figure
2dB
Typical Output Capacitance
0.7pF
Min Operating Temperature
-55°C
Max Operating Temperature
125°C
Operational Bias Conditions
5V/10mA
Typical Power Gain
17dB
Compliance
Cage Code
S0562
EU RoHS
No
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Toshiba 2SC5064-O(TE85R) Datasheet
Download the complete datasheet for Toshiba 2SC5064-O(TE85R) to view detailed technical specifications.
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