NPN RF Bipolar Junction Transistor for surface mount applications. Features a 12V maximum collector-emitter voltage, 0.03A maximum DC collector current, and 100mW maximum power dissipation. This single-element silicon transistor offers a minimum DC current gain of 120 and a maximum transition frequency of 7000MHz. Housed in a 3-pin USM (SOT-323) package with dimensions of 2mm x 1.25mm x 0.9mm, it operates within a temperature range of -55°C to 125°C.
PackageUSM
MountingSurface Mount
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Technical Specifications
Toshiba 2SC5065-Y(T5L,H) technical specifications.
General
| Package/Case | USM |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 2 |
| Package Width (mm) | 1.25 |
| Package Height (mm) | 0.9 |
| Seated Plane Height (mm) | 1.1(Max) |
| Mounting | Surface Mount |
| Jedec | SOT-323 |
| Material | Si |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector-Emitter Voltage | 12V |
| Maximum Collector Base Voltage | 20V |
| Maximum Emitter Base Voltage | 3V |
| Maximum DC Collector Current | 0.03A |
| Maximum Power Dissipation | 100mW |
| Minimum DC Current Gain | 120@10mA@5V |
| Minimum DC Current Gain Range | 120 to 200 |
| Maximum Transition Frequency | 7000(Typ)MHz |
| Maximum Noise Figure | 2dB |
| Typical Output Capacitance | 0.7pF |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 125°C |
| Operational Bias Conditions | 5V/10mA |
| Typical Power Gain | 14dB |
Compliance
| Cage Code | S0562 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba 2SC5065-Y(T5L,H) Datasheet
Download the complete datasheet for Toshiba 2SC5065-Y(T5L,H) to view detailed technical specifications.
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