NPN RF Bipolar Junction Transistor for surface mount applications. Features a 12V maximum collector-emitter voltage, 0.03A maximum DC collector current, and 100mW maximum power dissipation. This single-element silicon transistor offers a minimum DC current gain of 120 and a maximum transition frequency of 7000MHz. Housed in a 3-pin USM (SOT-323) package with dimensions of 2mm x 1.25mm x 0.9mm, it operates within a temperature range of -55°C to 125°C.
Sign in to ask questions about the Toshiba 2SC5065-Y(T5L,H) datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Toshiba 2SC5065-Y(T5L,H) technical specifications.
| Package/Case | USM |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 2 |
| Package Width (mm) | 1.25 |
| Package Height (mm) | 0.9 |
| Seated Plane Height (mm) | 1.1(Max) |
| Mounting | Surface Mount |
| Jedec | SOT-323 |
| Material | Si |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector-Emitter Voltage | 12V |
| Maximum Collector Base Voltage | 20V |
| Maximum Emitter Base Voltage | 3V |
| Maximum DC Collector Current | 0.03A |
| Maximum Power Dissipation | 100mW |
| Minimum DC Current Gain | 120@10mA@5V |
| Minimum DC Current Gain Range | 120 to 200 |
| Maximum Transition Frequency | 7000(Typ)MHz |
| Maximum Noise Figure | 2dB |
| Typical Output Capacitance | 0.7pF |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 125°C |
| Operational Bias Conditions | 5V/10mA |
| Typical Power Gain | 14dB |
| Cage Code | S0562 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Download the complete datasheet for Toshiba 2SC5065-Y(T5L,H) to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
