NPN RF BJT transistor for surface mount applications. Features a 12V collector-emitter voltage, 0.08A collector current, and 100mW power dissipation. Operates with a 10V/20mA bias, offering a minimum DC current gain of 120 at 20mA/10V and a maximum transition frequency of 7000MHz. Housed in a 3-pin USM (SOT-323) plastic package with gull-wing leads, measuring 2mm x 1.25mm x 0.9mm.
PackageUSM
MountingSurface Mount
Quick Jump:
Technical Specifications
Toshiba 2SC5085-Y(TE85L,F) technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | USM |
| Package/Case | USM |
| Lead Shape | Gull-wing |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 2 |
| Package Width (mm) | 1.25 |
| Package Height (mm) | 0.9 |
| Seated Plane Height (mm) | 1.1(Max) |
| Pin Pitch (mm) | 0.65 |
| Package Weight (g) | 0.006 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | SOT-323 |
| Material | Si |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector-Emitter Voltage | 12V |
| Maximum Collector Base Voltage | 20V |
| Maximum Emitter Base Voltage | 3V |
| Maximum DC Collector Current | 0.08A |
| Maximum Power Dissipation | 100mW |
| Minimum DC Current Gain | 120@20mA@10V |
| Minimum DC Current Gain Range | 120 to 200 |
| Maximum Transition Frequency | 7000(Typ)MHz |
| Maximum Noise Figure | 2dB |
| Typical Output Capacitance | 1pF |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 125°C |
| Operational Bias Conditions | 10V/20mA |
| Typical Power Gain | 16.5dB |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Toshiba 2SC5085-Y(TE85L,F) Datasheet
Download the complete datasheet for Toshiba 2SC5085-Y(TE85L,F) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.