
NPN RF BJT transistor, single configuration, silicon material, designed for surface mount applications. Features a 3-pin SSM (SOT-416) package with gull-wing leads, measuring 1.6mm x 0.8mm x 0.7mm. Operates with a maximum collector-emitter voltage of 12V and a maximum DC collector current of 0.08A. Achieves a typical transition frequency of 7000MHz and a typical noise figure of 2dB. Maximum power dissipation is 100mW, with an operating temperature range of -55°C to 125°C.
Toshiba 2SC5086(T5LKMC3,F) technical specifications.
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