
NPN RF BJT transistor for surface mount applications, featuring a 3-pin SSM (SOT-416) plastic package with gull-wing leads. This single-element silicon transistor offers a maximum collector-emitter voltage of 12V and a maximum DC collector current of 0.08A. Key performance specifications include a maximum transition frequency of 7000MHz, a maximum noise figure of 2dB, and typical power gain of 16.5dB. Operating temperature range is -55°C to 125°C.
Toshiba 2SC5086(TE85L,F) technical specifications.
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