NPN RF Bipolar Junction Transistor for surface mount applications. Features a 4-pin SMQ package with dimensions of 2.9mm (L) x 1.5mm (W) x 1.1mm (H). Operates with a maximum collector-emitter voltage of 12V and a maximum collector current of 0.08A, with a power dissipation of 150mW. Offers a minimum DC current gain of 120 at 20mA/10V and a typical transition frequency of 7000MHz. Suitable for operation across a temperature range of -55°C to 125°C.
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Toshiba 2SC5087-Y(TE85R) technical specifications.
| Package/Case | SMQ |
| Pin Count | 4 |
| PCB | 4 |
| Package Length (mm) | 2.9 |
| Package Width (mm) | 1.5 |
| Package Height (mm) | 1.1 |
| Seated Plane Height (mm) | 1.26 |
| Mounting | Surface Mount |
| Material | Si |
| Type | NPN |
| Configuration | Single Dual Emitter |
| Number of Elements per Chip | 1 |
| Maximum Collector-Emitter Voltage | 12V |
| Maximum Collector Base Voltage | 20V |
| Maximum Emitter Base Voltage | 3V |
| Maximum DC Collector Current | 0.08A |
| Maximum Power Dissipation | 150mW |
| Minimum DC Current Gain | 120@20mA@10V |
| Minimum DC Current Gain Range | 120 to 200 |
| Maximum Transition Frequency | 7000(Typ)MHz |
| Maximum Noise Figure | 2dB |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 125°C |
| Operational Bias Conditions | 10V/20mA |
| Cage Code | S0562 |
| EU RoHS | No |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
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