NPN RF Bipolar Junction Transistor for surface mount applications. Features a 4-pin SMQ package with dimensions of 2.9mm (L) x 1.5mm (W) x 1.1mm (H). Operates with a maximum collector-emitter voltage of 12V and a maximum collector current of 0.08A, with a power dissipation of 150mW. Offers a minimum DC current gain of 120 at 20mA/10V and a typical transition frequency of 7000MHz. Suitable for operation across a temperature range of -55°C to 125°C.
PackageSMQ
MountingSurface Mount
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Technical Specifications
Toshiba 2SC5087-Y(TE85R) technical specifications.
General
Package/Case
SMQ
Pin Count
4
PCB
4
Package Length (mm)
2.9
Package Width (mm)
1.5
Package Height (mm)
1.1
Seated Plane Height (mm)
1.26
Mounting
Surface Mount
Material
Si
Type
NPN
Configuration
Single Dual Emitter
Number of Elements per Chip
1
Maximum Collector-Emitter Voltage
12V
Maximum Collector Base Voltage
20V
Maximum Emitter Base Voltage
3V
Maximum DC Collector Current
0.08A
Maximum Power Dissipation
150mW
Minimum DC Current Gain
120@20mA@10V
Minimum DC Current Gain Range
120 to 200
Maximum Transition Frequency
7000(Typ)MHz
Maximum Noise Figure
2dB
Min Operating Temperature
-55°C
Max Operating Temperature
125°C
Operational Bias Conditions
10V/20mA
Compliance
Cage Code
S0562
EU RoHS
No
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Toshiba 2SC5087-Y(TE85R) Datasheet
Download the complete datasheet for Toshiba 2SC5087-Y(TE85R) to view detailed technical specifications.
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