NPN RF Bipolar Junction Transistor for high-frequency applications. Features a 10V collector-emitter voltage and 0.04A DC collector current. Offers 100mW maximum power dissipation and a minimum DC current gain of 80 at 8V/20mA. Operates up to 10GHz transition frequency with a 2.5dB noise figure. Packaged in a 3-pin USM (SOT-323) surface-mount case, measuring 2mm x 1.25mm x 0.9mm.
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Toshiba 2SC5090-O(T5L,H) technical specifications.
| Package/Case | USM |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 2 |
| Package Width (mm) | 1.25 |
| Package Height (mm) | 0.9 |
| Seated Plane Height (mm) | 1.1(Max) |
| Mounting | Surface Mount |
| Jedec | SOT-323 |
| Material | Si |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector-Emitter Voltage | 10V |
| Maximum Collector Base Voltage | 20V |
| Maximum Emitter Base Voltage | 1.5V |
| Maximum DC Collector Current | 0.04A |
| Maximum Power Dissipation | 100mW |
| Minimum DC Current Gain | 80@20mA@8V |
| Minimum DC Current Gain Range | 50 to 120 |
| Maximum Transition Frequency | 10000(Typ)MHz |
| Maximum Noise Figure | 2.5dB |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 125°C |
| Operational Bias Conditions | 8V/20mA |
| Cage Code | S0562 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
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