NPN RF Bipolar Junction Transistor, single configuration, silicon material, designed for surface mount applications. Features a 3-pin USM package (SOT-323) with dimensions of 2mm (L) x 1.25mm (W) x 0.9mm (H). Operates with a maximum collector-emitter voltage of 10V, maximum collector current of 0.04A, and maximum power dissipation of 100mW. Exhibits a minimum DC current gain of 50 at 8V/20mA and a typical transition frequency of 10000MHz. Suitable for operation across a temperature range of -55°C to 125°C.
PackageUSM
MountingSurface Mount
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Technical Specifications
Toshiba 2SC5090-R(TE85R) technical specifications.
General
Package/Case
USM
Pin Count
3
PCB
3
Package Length (mm)
2
Package Width (mm)
1.25
Package Height (mm)
0.9
Seated Plane Height (mm)
1.1(Max)
Mounting
Surface Mount
Jedec
SOT-323
Material
Si
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector-Emitter Voltage
10V
Maximum Collector Base Voltage
20V
Maximum Emitter Base Voltage
1.5V
Maximum DC Collector Current
0.04A
Maximum Power Dissipation
100mW
Minimum DC Current Gain
50@20mA@8V
Minimum DC Current Gain Range
50 to 120
Maximum Transition Frequency
10000(Typ)MHz
Maximum Noise Figure
2.5dB
Min Operating Temperature
-55°C
Max Operating Temperature
125°C
Operational Bias Conditions
8V/20mA
Compliance
Cage Code
S0562
EU RoHS
No
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Toshiba 2SC5090-R(TE85R) Datasheet
Download the complete datasheet for Toshiba 2SC5090-R(TE85R) to view detailed technical specifications.
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