NPN RF Bipolar Junction Transistor, single configuration, silicon material, designed for surface mount applications. Features a 3-pin USM package (SOT-323) with dimensions of 2mm (L) x 1.25mm (W) x 0.9mm (H). Operates with a maximum collector-emitter voltage of 10V, maximum collector current of 0.04A, and maximum power dissipation of 100mW. Exhibits a minimum DC current gain of 50 at 8V/20mA, with a typical transition frequency of 10000MHz and a maximum noise figure of 2.5 dB. Suitable for operation across a temperature range of -55°C to 125°C.
PackageUSM
MountingSurface Mount
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Technical Specifications
Toshiba 2SC5090-R(TE85R,F) technical specifications.
General
| Package/Case | USM |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 2 |
| Package Width (mm) | 1.25 |
| Package Height (mm) | 0.9 |
| Seated Plane Height (mm) | 1.1(Max) |
| Mounting | Surface Mount |
| Jedec | SOT-323 |
| Material | Si |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector-Emitter Voltage | 10V |
| Maximum Collector Base Voltage | 20V |
| Maximum Emitter Base Voltage | 1.5V |
| Maximum DC Collector Current | 0.04A |
| Maximum Power Dissipation | 100mW |
| Minimum DC Current Gain | 50@20mA@8V |
| Minimum DC Current Gain Range | 50 to 120 |
| Maximum Transition Frequency | 10000(Typ)MHz |
| Maximum Noise Figure | 2.5dB |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 125°C |
| Operational Bias Conditions | 8V/20mA |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Toshiba 2SC5090-R(TE85R,F) Datasheet
Download the complete datasheet for Toshiba 2SC5090-R(TE85R,F) to view detailed technical specifications.
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