RF BJT NPN transistor, single configuration, designed for surface mount applications. Features a 10V maximum collector-emitter voltage and 15mA maximum collector current. Operates with a maximum power dissipation of 100mW and boasts a typical transition frequency of 10000MHz. Housed in a 3-pin USM (SOT-323) package with dimensions of 2mm x 1.25mm x 0.9mm. Minimum DC current gain is 50 at 7mA/6V, with a typical noise figure of 3dB and typical power gain of 13dB.
PackageUSM
MountingSurface Mount
Quick Jump:
Technical Specifications
Toshiba 2SC5095-R(TE85R) technical specifications.
General
Package/Case
USM
Pin Count
3
PCB
3
Package Length (mm)
2
Package Width (mm)
1.25
Package Height (mm)
0.9
Seated Plane Height (mm)
1.1(Max)
Mounting
Surface Mount
Jedec
SOT-323
Material
Si
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector-Emitter Voltage
10V
Maximum Collector Base Voltage
20V
Maximum Emitter Base Voltage
1.5V
Maximum DC Collector Current
0.015A
Maximum Power Dissipation
100mW
Minimum DC Current Gain
50@7mA@6V
Minimum DC Current Gain Range
50 to 120
Maximum Transition Frequency
10000(Typ)MHz
Maximum Noise Figure
3dB
Typical Output Capacitance
0.5pF
Min Operating Temperature
-55°C
Max Operating Temperature
125°C
Operational Bias Conditions
6V/7mA
Typical Power Gain
13dB
Compliance
Cage Code
S0562
EU RoHS
No
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Toshiba 2SC5095-R(TE85R) Datasheet
Download the complete datasheet for Toshiba 2SC5095-R(TE85R) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.