NPN RF Bipolar Junction Transistor for surface mount applications. Features a 10V maximum collector-emitter voltage and 0.015A maximum DC collector current. Operates with a maximum power dissipation of 100mW and exhibits a minimum DC current gain of 50 at 6V/7mA. Offers a high transition frequency of 10000MHz (Typ) and a typical power gain of 13dB. Packaged in a 3-pin SSM (SOT-416) lead-frame SMT with gull-wing leads, measuring 1.6mm x 0.8mm x 0.7mm.
PackageSSM
MountingSurface Mount
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Technical Specifications
Toshiba 2SC5096-R(TE85L,F) technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SSM
Package/Case
SSM
Lead Shape
Gull-wing
Pin Count
3
PCB
3
Package Length (mm)
1.6
Package Width (mm)
0.8
Package Height (mm)
0.7
Seated Plane Height (mm)
0.9(Max)
Pin Pitch (mm)
0.5
Package Material
Plastic
Mounting
Surface Mount
Jedec
SOT-416
Material
Si
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector-Emitter Voltage
10V
Maximum Collector Base Voltage
20V
Maximum Emitter Base Voltage
1.5V
Maximum DC Collector Current
0.015A
Maximum Power Dissipation
100mW
Minimum DC Current Gain
50@7mA@6V
Minimum DC Current Gain Range
50 to 120
Maximum Transition Frequency
10000(Typ)MHz
Maximum Noise Figure
3dB
Typical Output Capacitance
0.5pF
Min Operating Temperature
-55°C
Max Operating Temperature
125°C
Operational Bias Conditions
6V/7mA
Typical Power Gain
13dB
Compliance
Cage Code
S0562
EU RoHS
Yes
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Toshiba 2SC5096-R(TE85L,F) Datasheet
Download the complete datasheet for Toshiba 2SC5096-R(TE85L,F) to view detailed technical specifications.
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