NPN RF Bipolar Junction Transistor for surface mount applications. Features a 10V collector-emitter voltage, 0.06A maximum collector current, and 100mW power dissipation. This single-element silicon transistor offers a minimum DC current gain of 80 at 5mA/5V and a typical transition frequency of 6000MHz. Packaged in a 3-pin USM (SOT-323) case with dimensions of 2mm x 1.25mm x 0.9mm, it operates within a temperature range of -55°C to 125°C.
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Toshiba 2SC5110-O(TE85R) technical specifications.
| Package/Case | USM |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 2 |
| Package Width (mm) | 1.25 |
| Package Height (mm) | 0.9 |
| Seated Plane Height (mm) | 1.1(Max) |
| Mounting | Surface Mount |
| Jedec | SOT-323 |
| Material | Si |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector-Emitter Voltage | 10V |
| Maximum Collector Base Voltage | 20V |
| Maximum Emitter Base Voltage | 3V |
| Maximum DC Collector Current | 0.06A |
| Maximum Power Dissipation | 100mW |
| Minimum DC Current Gain | 80@5mA@5V |
| Minimum DC Current Gain Range | 50 to 120 |
| Maximum Transition Frequency | 6000(Typ)MHz |
| Typical Output Capacitance | 0.9pF |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 125°C |
| Operational Bias Conditions | 5V/5mA |
| Typical Power Gain | 10dB |
| Cage Code | S0562 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
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