RF BJT NPN transistor, single configuration, for surface mount applications. Features a maximum collector-emitter voltage of 10V and a maximum DC collector current of 0.06A. Operates with a typical power gain of 10dB and a maximum transition frequency of 6000MHz. Packaged in a 3-pin USM (SOT-323) case with dimensions of 2mm x 1.25mm x 0.9mm. Suitable for operation between -55°C and 125°C.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Toshiba 2SC5110-Y(T5L,H) datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | USM |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 2 |
| Package Width (mm) | 1.25 |
| Package Height (mm) | 0.9 |
| Seated Plane Height (mm) | 1.1(Max) |
| Mounting | Surface Mount |
| Jedec | SOT-323 |
| Material | Si |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector-Emitter Voltage | 10V |
| Maximum Collector Base Voltage | 20V |
| Maximum Emitter Base Voltage | 3V |
| Maximum DC Collector Current | 0.06A |
| Maximum Power Dissipation | 100mW |
| Minimum DC Current Gain | 120@5mA@5V |
| Minimum DC Current Gain Range | 120 to 200 |
| Maximum Transition Frequency | 6000(Typ)MHz |
| Typical Output Capacitance | 0.9pF |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 125°C |
| Operational Bias Conditions | 5V/5mA |
| Typical Power Gain | 10dB |
| Cage Code | S0562 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Download the complete datasheet for Toshiba 2SC5110-Y(T5L,H) to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
