NPN RF Bipolar Junction Transistor for surface mount applications. Features a 10V maximum collector-emitter voltage and 0.06A maximum DC collector current. This single-element silicon transistor is housed in a 3-pin SSM (SOT-416) plastic package with gull-wing leads, measuring 1.6mm x 0.8mm x 0.7mm. It offers a minimum DC current gain of 120 at 5mA/5V and a typical transition frequency of 6000MHz, with a typical power gain of 10dB. Operating temperature range is -55°C to 125°C.
PackageSSM
MountingSurface Mount
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Technical Specifications
Toshiba 2SC5111-Y(TE85R) technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SSM
Package/Case
SSM
Lead Shape
Gull-wing
Pin Count
3
PCB
3
Package Length (mm)
1.6
Package Width (mm)
0.8
Package Height (mm)
0.7
Seated Plane Height (mm)
0.9(Max)
Pin Pitch (mm)
0.5
Package Material
Plastic
Mounting
Surface Mount
Jedec
SOT-416
Material
Si
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector-Emitter Voltage
10V
Maximum Collector Base Voltage
20V
Maximum Emitter Base Voltage
3V
Maximum DC Collector Current
0.06A
Maximum Power Dissipation
100mW
Minimum DC Current Gain
120@5mA@5V
Minimum DC Current Gain Range
120 to 200
Maximum Transition Frequency
6000(Typ)MHz
Typical Output Capacitance
0.9pF
Min Operating Temperature
-55°C
Max Operating Temperature
125°C
Operational Bias Conditions
5V/5mA
Typical Power Gain
10dB
Compliance
Cage Code
S0562
EU RoHS
No
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Toshiba 2SC5111-Y(TE85R) Datasheet
Download the complete datasheet for Toshiba 2SC5111-Y(TE85R) to view detailed technical specifications.
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