NPN bipolar junction transistor, single configuration, designed for through-hole mounting. Features an 80V collector-emitter voltage, 5A maximum collector current, and 1800mW power dissipation. This silicon transistor offers a minimum DC current gain of 40 at 3A/1V and a typical transition frequency of 120MHz. Housed in a 3-pin SIP plastic package with dimensions of 10mm length, 4.5mm width, and 13.4mm height.
PackageSIP
MountingThrough Hole
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Technical Specifications
Toshiba 2SC5176(TPCANO) technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
SIP
Package/Case
SIP
Package Description
Single In Line Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Package Length (mm)
10
Package Width (mm)
4.5
Package Height (mm)
13.4
Package Material
Plastic
Mounting
Through Hole
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
100V
Maximum Emitter Base Voltage
7V
Maximum Collector-Emitter Voltage
80V
Maximum DC Collector Current
5A
Maximum Power Dissipation
1800mW
Material
Si
Minimum DC Current Gain
40@3A@1V|70@1A@1V
Maximum Transition Frequency
120(Typ)MHz
Category
Bipolar Power
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
HTS Code
8541290075
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Toshiba 2SC5176(TPCANO) Datasheet
Download the complete datasheet for Toshiba 2SC5176(TPCANO) to view detailed technical specifications.
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