NPN bipolar junction transistor, single configuration, designed for through-hole mounting. Features an 80V collector-emitter voltage, 5A maximum collector current, and 1800mW power dissipation. This silicon transistor offers a minimum DC current gain of 40 at 3A/1V and a typical transition frequency of 120MHz. Housed in a 3-pin SIP plastic package with dimensions of 10mm length, 4.5mm width, and 13.4mm height.
PackageSIP
MountingThrough Hole
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Technical Specifications
Toshiba 2SC5176(TPCANO) technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | SIP |
| Package/Case | SIP |
| Package Description | Single In Line Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 10 |
| Package Width (mm) | 4.5 |
| Package Height (mm) | 13.4 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 100V |
| Maximum Emitter Base Voltage | 7V |
| Maximum Collector-Emitter Voltage | 80V |
| Maximum DC Collector Current | 5A |
| Maximum Power Dissipation | 1800mW |
| Material | Si |
| Minimum DC Current Gain | 40@3A@1V|70@1A@1V |
| Maximum Transition Frequency | 120(Typ)MHz |
| Category | Bipolar Power |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541290075 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba 2SC5176(TPCANO) Datasheet
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