The 2SC524R is a single NPN bipolar junction transistor from Toshiba with a maximum collector-emitter voltage of 60V and a maximum DC collector current of 1.5A. It has a maximum power dissipation of 10W and operates at a maximum temperature of 175°C. The transistor is packaged in a 2-9A1A plastic package with a seated plane height of 8.4mm and is suitable for through-hole mounting.
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Toshiba 2SC524R technical specifications.
| Package/Case | 2-9A1A |
| Pin Count | 4 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 26(Max) |
| Package Width (mm) | 13.5(Max) |
| Package Height (mm) | 8.4(Max) |
| Seated Plane Height (mm) | 8.4(Max) |
| Package Material | Plastic |
| Mounting | Through Hole |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 100V |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 60V |
| Maximum DC Collector Current | 1.5A |
| Maximum Power Dissipation | 10000mW |
| Material | Si |
| Minimum DC Current Gain | 30@200mA@2V |
| Maximum Transition Frequency | 60(Typ)MHz |
| Category | Bipolar Power |
| Max Operating Temperature | 175°C |
| Cage Code | S0562 |
| HTS Code | 8541290075 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
