The 2SC5319(TE85R) is a surface mount NPN transistor from Toshiba with a maximum collector-emitter voltage of 5V, maximum collector-base voltage of 8V, and maximum emitter-base voltage of 1.5V. It has a maximum DC collector current of 0.02A and a maximum power dissipation of 100mW. The transistor is packaged in a USQ package with a seated plane height of 1.1mm and a weight of 0.006g. It operates over a temperature range of -55°C to 125°C.
PackageUSQ
MountingSurface Mount
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Technical Specifications
Toshiba 2SC5319(TE85R) technical specifications.
General
| Package/Case | USQ |
| Pin Count | 4 |
| PCB | 4 |
| Package Length (mm) | 2 |
| Package Width (mm) | 1.25 |
| Package Height (mm) | 0.95 |
| Seated Plane Height (mm) | 1.1 |
| Package Weight (g) | 0.006 |
| Mounting | Surface Mount |
| Material | Si |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector-Emitter Voltage | 5V |
| Maximum Collector Base Voltage | 8V |
| Maximum Emitter Base Voltage | 1.5V |
| Maximum DC Collector Current | 0.02A |
| Maximum Power Dissipation | 100mW |
| Minimum DC Current Gain | 50@15mA@3V |
| Minimum DC Current Gain Range | 50 to 120 |
| Maximum Transition Frequency | 16000(Typ)MHz |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 125°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | No |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Toshiba 2SC5319(TE85R) Datasheet
Download the complete datasheet for Toshiba 2SC5319(TE85R) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.