NPN Bipolar Junction Transistor (BJT) for power applications. Features a 600V collector-emitter voltage and 14A continuous collector current. Housed in a TO-3P(HIS) package with through-hole mounting. Maximum power dissipation is 60000mW. Minimum DC current gain is 10 at 2A/5V.
Sign in to ask questions about the Toshiba 2SC5411(LG1,Q,M) datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Toshiba 2SC5411(LG1,Q,M) technical specifications.
| Package/Case | TO-3P(HIS) |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 15.5 |
| Package Width (mm) | 5.5 |
| Package Height (mm) | 16.5 |
| Seated Plane Height (mm) | 29 |
| Package Weight (g) | 5.5 |
| Mounting | Through Hole |
| Jedec | SC-65 |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 1500V |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 600V |
| Maximum DC Collector Current | 14A |
| Maximum Power Dissipation | 60000mW |
| Material | Si |
| Minimum DC Current Gain | 10@2A@5V|4@11A@5V |
| Maximum Transition Frequency | 2(Typ)MHz |
| Category | Bipolar Power |
| Max Operating Temperature | 150°C |
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Download the complete datasheet for Toshiba 2SC5411(LG1,Q,M) to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
